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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2017    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of interstitial nitrogen atoms on atomic oxygen adsorption on Fe (001) surface from Ab initio calculations 会议论文 17th IUMRS International Conference in Asia, IUMRS-ICA 2016, Qingdao, China, 2016-10-20 作者:  Ye, Fei;  Wang, Ya Kun;  Xu, Fei Fan;  Tong, Ke 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/09 Comprehensive Investigations on Charge Diffusion Physics in SiN-based 3D NAND Flash Memory through Systematical Ab initio Calculations 会议论文 63rd IEEE Annual International Electron Devices Meeting (IEDM), DEC 02-06, 2017 作者:  Wu, Jixuan;  Han, Dan;  Yang, Wenjing;  Chen, Shiyou;  Jiang, Xiangwei 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/31 A study on W vacancy defect in mono-layer transition-metal dichalcogenide (TMD) TFETs through systematic ab initio calculations 会议论文 22nd Silicon Nanoelectronics Workshop, SNW 2017, 4 June 2017 through 5 June 2017 作者:  Wu, Jixuan;  Fan, Zhiqiang;  Chen, Jiezhi;  Jiang, Xiangwei 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/31 A Study on W Vacancy Defect in Mono-layer Transition-Metal Dichalcogenide (TMD) TFETs through Systematic Ab initio Calculations 会议论文 Silicon Nanoelectronics Workshop (SNW), JUN 04-05, 2017 作者:  Wu, Jixuan;  Fan, Zhiqiang;  Chen, Jiezhi;  Jiang, Xiangwei 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/31