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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 925-932 作者:  Jin, P.;  He, G.;  Wang, P. H.;  Liu, M.;  Xiao, D. Q. 收藏  |  浏览/下载：57/0  |  提交时间：2017/09/11 High-k Gate Dielectrics  Hftiox Thin Films  Sol-gel Processing  Optical Properties  Electrical Properties   Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 688, 期号: 无, 页码: 252-259 作者:  Xiao, D. Q.;  He, G.;  Liu, M.;  Gao, J.;  Jin, P. 收藏  |  浏览/下载：34/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Optical Constant  Electrical Properties  Ti incorporaTion  Sol-gel  Conduction Mechanisms   Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 期号: 无, 页码: 115-121 作者:  Zheng, C. Y.;  He, G.;  Chen, X. F.;  Liu, M.;  Lv, J. G. 收藏  |  浏览/下载：19/0  |  提交时间：2017/10/18 Band Offset  Hfo2/ingazno4 Heterojunctions  X-ray Photoelectron Spectroscopy  Thin Film Transistors  Electrical Properties  Mos Capacitor   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：22/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 10, 页码: 11640-11649 作者:  Jiang, S. S.;  He, G.;  Gao, J.;  Xiao, D. Q.;  Jin, P. 收藏  |  浏览/下载：23/0  |  提交时间：2017/10/18 Electrical Properties  High-k Gate Dielectrics  Metal-oxide-semiconductor  Conduction Mechanisms  Sputtering   Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358 作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong 收藏  |  浏览/下载：20/0  |  提交时间：2017/10/18 High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文 CERAMICS INTERNATIONAL, 2016, 卷号: 42, 期号: 6, 页码: 6761-6769 作者:  Jin, Peng;  He, Gang;  Xiao, Dongqi;  Gao, Juan;  Liu, Mao 收藏  |  浏览/下载：15/0  |  提交时间：2017/10/18 High-k Gate Dielectrics  Sol-gel  Electrical Properties  Leakage Current Transport Mechanism  Optical Properties   Microstructure, optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfO2 gate dielectrics 期刊论文 Ceramics International, 2016, 卷号: Vol.42 No.6, 页码: 6761-6769 作者:  Sun,Zhaoqi;  Liu,Yanmei;  Zhang,Miao;  Lv,Jianguo;  Liu,Mao 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22 THIN-FILMS  TEMPERATURE-DEPENDENCE  HAFNIUM  DEPOSITION  STACKS  ALD   Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: Vol.679, 页码: 115-121 作者:  Chen,X. F.;  Lv,J. G.;  Jin,P.;  Zhang,J. W.;  Xiao,D. Q. 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 THIN-FILM TRANSISTORS  TEMPERATURE  DEPOSITION  LAYER  STACK   Measuring the internal temperature of dielectrics machined by the ultrashort laser pulse through the black-body irradiation method 期刊论文 物理学报, 2016, 卷号: 65, 期号: 12 作者:  Huang YY(黄媛媛);  Li YB(李阳博);  Bo F(柏锋);  Fan WZ(范文中);  Li HJ(李虹瑾) 收藏  |  浏览/下载：11/0  |  提交时间：2017/12/25