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Gate dielectric ion implantation to modulate the threshold voltage of In2O3nanowire field effect transistors 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 19
作者:  Yu, Yang;  Li, Wenqing;  Wu, Pengcheng;  Jiang, Changzhong;  Xiao, Xiangheng
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05
Research progress in graphene synthesis by Cncluster ion implantation 期刊论文
Zhongguo Biaomian Gongcheng/China Surface Engineering, 2016, 卷号: 29, 期号: 5
作者:  Wang, Ze-Song;  Li, Hui;  Fu, De-Jun
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/05
Gate dielectric ion implantation to modulate the threshold voltage of In2O3nanowire field effect transistors 期刊论文
Applied Physics Letters, 2016, 卷号: 109, 期号: 19
作者:  Li, Wenqing;  Wu, Pengcheng;  Yu, Yang;  Jiang, Changzhong;  Xiao, Xiangheng
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/05
Fabrication of highly homogeneous surface-enhanced Raman scattering substrates using Ag ion implantation 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2016, 卷号: 28, 期号: 25
作者:  Jiang, Changzhong;  Zhang, Xingang;  Mei, Fei;  Cheng, Li;  Wu, Wei
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/05
Fabrication of porous TiO2 nanorod array photoelectrodes with enhanced photoelectrochemical water splitting by helium ion implantation 期刊论文
NANOSCALE, 2016, 卷号: 8, 期号: 20
作者:  Liu, Yichao;  Shen, Shaohua;  Ren, Feng;  Chen, Jianan;  Fu, Yanming
收藏  |  浏览/下载:5/0  |  提交时间:2019/12/05
Gate dielectric ion implantation to modulate the threshold voltage of In2O3 nanowire field effect transistors 期刊论文
APPLIED PHYSICS LETTERS, 2016, 卷号: 109, 期号: 19
作者:  Yu, Yang;  Li, Wenqing;  Wu, Pengcheng;  Jiang, Changzhong;  Xiao, Xiangheng
收藏  |  浏览/下载:1/0  |  提交时间:2019/12/05
Fabrication of porous TiO2nanorod array photoelectrodes with enhanced photoelectrochemical water splitting by helium ion implantation 期刊论文
Nanoscale, 2016, 卷号: 8, 期号: 20
作者:  Liu, Yichao;  Shen, Shaohua;  Ren, Feng;  Chen, Jianan;  Fu, Yanming
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/05


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