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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2012     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio 期刊论文 应用物理学快报, 2012 Zhan, Zhan; Huang, Qiandian; Huang, Ru; Jiang, Wenzhe; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs based on an Analytical Model 期刊论文 iete technical review, 2012 Zhang, Lining; Wang, Shaodi; Ma, Chenyue; He, Jin; Xu, Chunkai; Ma, Yutao; Ye, Yun; Liang, Hailang; Chen, Qin; Chan, Mansun 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Conformal mapping  Gate-all-around MOSFET  Gate underlap  Short channel effects  TCAD simulations  SOI MOSFETS  FRINGING FIELDS  SCALING THEORY  DEVICES   Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories 期刊论文 IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 6, 页码: 743-745 Wu, QQ; Chen, J; Lu, ZC; Zhou, ZM; Luo, JX; Chai, Z; Yu, T; Qiu, C; Li, L; Pang, A; Wang, X; Fossum, JG 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/17 Capacitorless DRAM  overlap  SOI floating-body cell (FBC)  tunneling field-effect transistor (T-FET)  underlap