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科研机构
半导体研究所 [6]
中南林业科技大学 [1]
内容类型
期刊论文 [7]
发表日期
2011 [7]
学科主题
半导体材料 [2]
半导体物理 [2]
光电子学 [1]
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Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation
期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Zhou, Huiying
;
Qu, Shengchun
;
Jin, Peng
;
Xu, Bo
;
Ye, Xiaoling
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/05/12
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
;
Shang, Xiang-jun
;
Niu, Zhi-chuan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium arsenide
Growth(materials)
Molecular beam epitaxy
Semiconducting gallium
Semiconducting indium
Semiconductor quantum wells
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002
Qiu, Yingping
;
Wang, Yang
;
Shao, Yongbo
;
Zhou, Daibing
;
Liang, Song
;
Zhao, Lingjuan
;
Wang, Wei
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2012/06/14
Absorption
Capacitance
Fabrication
Light extinction
Semiconducting indium gallium arsenide
Waveguides
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Zhou, Huiying
;
Qu, Shengchun*
;
Jin, Peng
;
Xu, Bo
;
Ye, Xiaoling
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/28
A1. Atom force microscopy
A1. Nanostructures
A3. Molecular-beam epitaxy
B1. Nanomaterials
B2. Semiconducting gallium arsenide
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