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CORC

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PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 卷号: 269, 期号: 23, 页码: 2835-2839
作者:  Zhang, C. H.;  Sun, Y. M.;  Jin, Y. F.;  Zhang, L. Q.;  Yang, Y. T.
收藏  |  浏览/下载：27/0  |  提交时间：2015/10/15
Microstructure and transport properties of sol-gel derived highly (100)-oriented lanthanum nickel oxide thin films on SiO2/Si substrate 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 336, 期号: 1, 页码: 44-49
作者:  Zhu, M. W.;  Wang, Z. J.;  Chen, Y. N.;  Zhang, Z. D.
收藏  |  浏览/下载：11/0  |  提交时间：2021/02/02
Effect of electromechanical boundary conditions on the properties of epitaxial ferroelectric thin films 期刊论文
http://dx.doi.org/10.1088/1674-1056/20/10/107701, 2011
Zhou Zhi-Dong; Zhang Chun-Zu; Jiang Quan; 周志东
收藏  |  浏览/下载：2/0  |  提交时间：2013/12/12
Interplay between charge stripes and sign reversals of Hall and Seebeck effects in stripe-ordered La1.6-xNd0.4SrxCuO4 superconductors 期刊论文
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 卷号: 23, 期号: 36, 页码: 6
作者:  Xie, L.;  Ding, J. F.;  Guo, R. R.;  Sun, X. F.;  Li, X. G.
收藏  |  浏览/下载：20/0  |  提交时间：2021/02/02
Thermal stability and dopant segregation for Schottky diodes with ultrathin epitaxial NiSi2-y 期刊论文
IEEE Electron Device Letters, 2011
作者:  Luo J(罗军)
收藏  |  浏览/下载：8/0  |  提交时间：2012/11/16
Effect of high temperature algan buffer thickness on gan epilayer grown on si(111) substrates 期刊论文
Journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：19/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：0/0  |  提交时间：2021/02/02
Investigation of structural and optical anisotropy of m-plane inn films grown on gamma-lialo2(100) by metal organic chemical vapour deposition 期刊论文
Journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 5
作者:  Fu, D.;  Zhang, R.;  Liu, B.;  Xie, Z. L.;  Xiu, X. Q.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12

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