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科研机构
半导体研究所 [13]
内容类型
期刊论文 [13]
发表日期
2011 [13]
学科主题
半导体物理 [13]
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浏览/检索结果:
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发表日期:2011
学科主题:半导体物理
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Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
期刊论文
journal of raman spectroscopy, 2011, 卷号: 42, 期号: 6, 页码: 1388-1391
Zhang, J
;
Tan, PH
;
Zhao, WJ
;
Lu, J
;
Zhao, JH
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/01/06
Raman spectroscopy
ultrathin Fe(3)O(4) film
crystal orientation
strain
phonon strain-shift coefficient
PULSED-LASER DEPOSITION
THIN-FILMS
SPIN-TRANSPORT
MAGNETITE
SEMICONDUCTORS
SPINTRONICS
SCATTERING
CORROSION
DEVICES
GROWTH
Magnetic coupling properties of Mn-doped AlN nanowires: First-principles calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 15, 页码: 1686-1689
Zhang YJ
;
Shi HL
;
Li RW
;
Zhang P
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  |  
浏览/下载:43/7
  |  
提交时间:2011/07/05
Nanowire
Magnetic semiconductor
Level splitting
SEMICONDUCTORS
FERROMAGNETISM
SUPERLATTICES
MODEL
GAN
Hole mediated magnetism in Mn-doped GaN nanowires
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74313
作者:
Li JB
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  |  
浏览/下载:62/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
ROOM-TEMPERATURE
QUANTUM WIRES
SEMICONDUCTORS
FERROMAGNETISM
FIELD
GAMNN
Magnetic and electronic structure properties of Co-doped SnO2 nanoparticles synthesized by the sol-gel-hydrothermal technique
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83930
作者:
Li JB
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  |  
浏览/下载:61/1
  |  
提交时间:2011/07/05
ROOM-TEMPERATURE FERROMAGNETISM
SEMICONDUCTORS
ENERGY
Influence of magnetocrystalline anisotropy on magneto-optics in GaMnAs/InGaAs epilayer
期刊论文
journal of infrared and millimeter waves, 2011, 卷号: 30, 期号: 1, 页码: 1-5
作者:
Zhu H
;
Gan HD
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  |  
浏览/下载:67/5
  |  
提交时间:2011/07/05
(Ga, Mn)As
magneto-optical effect
oscillation
magnetic anisotropic
(GA,MN)AS FILMS
SEMICONDUCTORS
Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 100301
Wang, LG
;
Shen, C
;
Zheng, HZ
;
Zhu, H
;
Zhao, JH
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/01/06
charged acceptor centre
screening effect
exchange interaction
SHALLOW ACCEPTOR STATES
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
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提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability
期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:
Liu J
;
Tan PH
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浏览/下载:90/4
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提交时间:2011/07/05
FERRIC-CHLORIDE
CHARGE-TRANSFER
SINGLE-LAYER
GRAPHENE
SPECTROSCOPY
SCATTERING
SPECTRA
Native p-type transparent conductive CuI via intrinsic defects
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 54907
Wang J
;
Li JB
;
Li SS
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  |  
浏览/下载:36/0
  |  
提交时间:2012/01/06
HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS
AUGMENTED-WAVE METHOD
COPPER HALIDES
BAND-STRUCTURE
II-VI
SEMICONDUCTORS
EMISSION
DIAMOND
CUBR
CUCL
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