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科研机构
半导体研究所 [10]
内容类型
期刊论文 [10]
发表日期
2011 [10]
学科主题
半导体材料 [10]
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发表日期:2011
学科主题:半导体材料
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
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  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Far-field improvement of quantum cascade lasers through high-reflection coatings
期刊论文
electronics letters, 2011, 卷号: 47, 期号: 2, 页码: 127
作者:
Li L
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浏览/下载:43/0
  |  
提交时间:2011/07/05
OPERATION
TEMPERATURE
High-power quantum dot superluminescent diode with integrated optical amplifier section
期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC
;
Jin, P
;
Lv, XQ
;
Li, XK
;
Wang, ZG
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  |  
浏览/下载:13/0
  |  
提交时间:2012/02/06
LIGHT-EMITTING-DIODES
SPECTRUM
Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres
期刊论文
polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537
Ni XW
;
Hu XJ
;
Zhou SY
;
Sun CH
;
Bai XX
;
Chen P
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  |  
浏览/下载:59/2
  |  
提交时间:2011/07/05
conducting polymers
hollow microspheres
microwave absorbing properties
poly(3,4-ethylenedioxythiophene) (PEDOT)
POLY 3,4-ETHYLENEDIOXYTHIOPHENE
CORE-SHELL
HOLLOW
POLYMERIZATION
POLYANILINE
SURFACE
ELECTROCHEMISTRY
POLYTHIOPHENES
NANOPARTICLES
DISPERSION
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Structures and optical characteristics of InGaN quantum dots grown by MBE
期刊论文
xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032
Wang, Baozhu
;
Yan, Cuiying
;
Wang, Xiaoliang
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浏览/下载:22/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Gallium nitride
Molecular beam epitaxy
Optical materials
Optical properties
Reflection high energy electron diffraction
Sapphire
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
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  |  
浏览/下载:26/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
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浏览/下载:43/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
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