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科研机构
半导体研究所 [9]
内容类型
期刊论文 [9]
发表日期
2011 [9]
学科主题
半导体材料 [9]
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发表日期:2011
学科主题:半导体材料
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Synthesis and microwave absorbing properties of poly(3,4-ethylenedioxythiophene) (PEDOT) microspheres
期刊论文
polymers for advanced technologies, 2011, 卷号: 22, 期号: 5, 页码: 532-537
Ni XW
;
Hu XJ
;
Zhou SY
;
Sun CH
;
Bai XX
;
Chen P
收藏
  |  
浏览/下载:59/2
  |  
提交时间:2011/07/05
conducting polymers
hollow microspheres
microwave absorbing properties
poly(3,4-ethylenedioxythiophene) (PEDOT)
POLY 3,4-ETHYLENEDIOXYTHIOPHENE
CORE-SHELL
HOLLOW
POLYMERIZATION
POLYANILINE
SURFACE
ELECTROCHEMISTRY
POLYTHIOPHENES
NANOPARTICLES
DISPERSION
Anomalous linear photogalvanic effect observed in a GaN-based two-dimensional electron gas
期刊论文
physical review b, 2011, 卷号: 84, 期号: 7, 页码: 75341
作者:
Jiang CY
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  |  
浏览/下载:13/0
  |  
提交时间:2011/09/14
PHOTOMAGNETISM
METALS
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:
Li GK
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浏览/下载:74/2
  |  
提交时间:2011/07/05
vanadium dioxide
infrared transition
diffraction effect
dual ion beam sputtering
annealing
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
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  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:
Pan X
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浏览/下载:20/0
  |  
提交时间:2011/09/14
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
ALN INTERLAYERS
FILMS
STRESS
LAYERS
DISLOCATIONS
REDUCTION
DENSITY
DIODES
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M
;
Wang, XL
;
Pan, X
;
Xiao, HL
;
Wang, CM
;
Hou, QF
;
Wang, ZG
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  |  
浏览/下载:26/0
  |  
提交时间:2012/01/06
GaN
MOCVD
Si(111)
AlN
VAPOR-PHASE EPITAXY
LAYERS
SUBSTRATE
MOCVD
STRESS
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:
Pan X
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浏览/下载:81/5
  |  
提交时间:2011/07/05
Sandwich structure
Stress
Aluminum nitride
Gallium nitride
Silicon
PHONON DEFORMATION POTENTIALS
WURTZITE ALN
SILICON
STRESS
TRANSISTORS
EPITAXY
LAYERS
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
;
Song HP
;
Zhang B
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  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
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