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| Purifying polycrystalline silicon by removing boron oxide, comprises placing silicon material in quartz ring, placing quartz ring in water cooled copper crucible, vacuumizing vacuum room and bombarding silicon material by electron gun. 专利
申请日期: 2010-01-01, 公开日期: 2010-12-15
作者: DONG W GU Z TAN Y PENG X JIANG D
  收藏 | 浏览/下载：3/0 | 提交时间：2019/12/24 |
| Removal of boron impurity in polycrystalline silicon by heating silicon powder via high-temperature heating furnace to form silicon oxide film having oxidized surface, and contacting film with electron beam in electron beam melting furnace. 专利
申请日期: 2010-01-01, 公开日期: 2010-11-24
作者: DONG W TAN Y JIANG D ZOU R
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/24 |
| Removal of Boron from Metallurgical Grade Silicon by Electromagnetic Induction Slag Melting Method 会议论文
The 4th Asian EPM
作者: Zhang GL(张国梁); Lu YP(卢一平); Li TJ(李廷举)
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/24 |
| Separation of Boron from Concentrate for Vonsenite Ores by Na2CO3 Calcination 会议论文
The 13th Asia Pacific Confederation of Chemical engineering Congress, APCChE 2010
作者: Zhong JC(仲剑初)
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/24 |
| Removal of boron from polycrystalline silicon via partial evaporation, by partially melting polycrystalline silicon with electron beam, evaporating melted silicon, and collecting accumulated polycrystalline silicon. 专利
申请日期: 2010-01-01, 公开日期: 2010-05-19
作者: DONG W JIANG D LI G TAN Y
收藏 | 浏览/下载：6/0 | 提交时间：2019/12/24 |
| Calcifying and roasting method for boron-rich slag involves using limestone, slaked lime or lime as additive, and calcifying and roasting boron-rich slag at normal pressure and within preset temperature range. 专利
申请日期: 2010-01-01, 公开日期: 2010-09-01
作者: HU D HE D ZHONG J
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/24 |
| Boron fluoride dye fluorescent probe used for detecting mercury ion in natural water and living cell, contains boron-containing probe molecule. 专利
申请日期: 2010-01-01, 公开日期: 2010-10-06
作者: SONG K PENG X FAN J HU M WANG S LI
收藏 | 浏览/下载：8/0 | 提交时间：2019/12/24 |
| Influence of Low Tempering Temperature on Fracture Toughness of Ultra High Strength Boron Steel for Hot Forming 会议论文
2010 International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2010
作者: Chang Y(常颖); Hu P(胡平); Shen GZ(申国哲); Liu LZ(刘立忠); Li XD(李晓东)
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/24 |
| Continuously smelting to remove phosphorus and boron in polycrystalline silicon involves using two electronic guns to emit electron beams to smelt polycrystalline silicon. 专利
申请日期: 2010-01-01, 公开日期: 2010-05-19
作者: DONG W JIANG D LI G TAN Y
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/24 |
| Effect of B/C ratio on the physical properties of highly boron-doped diamond films 期刊论文
VACUUM, 2010, 卷号: 84, 页码: 930-934
作者: Jia, Fuchao; Bai, Yizhen; Qu, Fang; Zhao, Jijun; Zhuang, Chunqiang
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/24
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