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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2010    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 会议论文 international magnetics conference (intermag), madrid, spain, may 04-08, 2008 作者:  Gan HD 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/09 Magnetic analysis   Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文 physics letters a, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796 Ning JQ (Ning J. Q.); Xu SJ (Xu S. J.); Wei ZF (Wei Z. F.); Ruan XZ (Ruan X. Z.); Ji Y (Ji Yang); Zheng HZ (Zheng H. Z.); Liu HC (Liu H. C.) 收藏  |  浏览/下载：41/0  |  提交时间：2010/12/05 Optical Kerr effect  Electron spin  Quantum disks  InAs/GaAs  REFRACTIVE-INDEX  COHERENCE  GAAS  SEMICONDUCTORS   Domain wall resistance in perpendicular (Ga,Mn) As: Dependence on pinning 期刊论文 journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3481-3484 Wang KY (Wang K. Y.); Edmonds KW (Edmonds K. W.); Irvine AC (Irvine A. C.); Wunderlich J (Wunderlich J.); Olejnik K (Olejnik K.); Rushforth AW (Rushforth A. W.); Campion RP (Campion R. P.); Williams DA (Williams D. A.); Foxon CT (Foxon C. T.); Gallagher BL (Gallagher B. L.) 收藏  |  浏览/下载：101/8  |  提交时间：2010/09/07 Domain wall resistance  Pinning  Dependence   Easy axis reorientation and magneto-crystalline anisotropic resistance of tensile strained (Ga,Mn)As films 期刊论文 journal of magnetism and magnetic materials, 2010, 卷号: 322, 期号: 21, 页码: 3250-3254 Chen L (Chen L.); Yan S (Yan S.); Xu PF (Xu P. F.); Lu J (Lu J.); Deng JJ (Deng J. J.); Ji Y (Ji Y.); Wang KY (Wang K. Y.); Zhao JH (Zhao J. H.) 收藏  |  浏览/下载：90/4  |  提交时间：2010/09/07 Magnetic semiconductor  Magnetic anisotropy  Magneto-transport phenomenon  Molecular-beam epitaxy   Band-tail shape and transport near the metal-insulator transition in Si-doped 期刊论文 physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202 Misuraca J (Misuraca Jennifer); Trbovic J (Trbovic Jelena); Lu J (Lu Jun); Zhao JH (Zhao Jianhua); Ohno Y (Ohno Yuzo); Ohno H (Ohno Hideo); Xiong P (Xiong Peng); von Molnar S (von Molnar Stephan) 收藏  |  浏览/下载：24/0  |  提交时间：2010/10/11 PERSISTENT PHOTOCONDUCTIVITY  DX CENTERS  ALXGA1-XAS  GAAS  SEMICONDUCTORS   The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文 journal of optics, 2010, 卷号: 12, 期号: 5, 页码: art. no. 055203 Huang X (Huang X.); Zhang XH (Zhang X. H.); Zhu YG (Zhu Y. G.); Li T (Li T.); Han LF (Han L. F.); Shang XJ (Shang X. J.); Ni HQ (Ni H. Q.); Niu ZC (Niu Z. C.) 收藏  |  浏览/下载：77/6  |  提交时间：2010/08/17 InAs quantum dots  nonlinear refraction  reflection Z-scan  dc electric field effect  ELECTROOPTIC PROPERTIES  SATURABLE ABSORBER  OPTICAL-PROPERTIES  WELL STRUCTURES  SINGLE-BEAM  BAND-GAP  ELECTROABSORPTION  ABSORPTION  REFLECTION  DEPENDENCE   Temperature dependence of hole spin relaxation in ultrathin InAs monolayers 期刊论文 physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 5, 页码: 1597-1600 作者:  Zhang XH 收藏  |  浏览/下载：80/0  |  提交时间：2010/04/28 Ultrathin InAs monolayer  Hole spin relaxation  DP mechanism  SEMICONDUCTOR QUANTUM DOTS  WELLS  GAAS   Direct observation of excitonic polaron in InAs/GaAs quantum dots 期刊论文 epl, 2010, 卷号: 90, 期号: 3, 页码: art. no. 37004 Gong M (Gong Ming); Chen G (Chen Geng); He LX (He Lixin); Li CF (Li Chuan-Feng); Tang JS (Tang Jian-Shun); Sun FW (Sun Fang-Wen); Niu ZC (Niu Zhi-Chuan); Huang SS (Huang She-Song); Xiong YH (Xiong Yong-Hua); Ni HQ (Ni Hai-Qiao); Guo GC (Guo Guang-Can) 收藏  |  浏览/下载：122/3  |  提交时间：2010/07/18 PHONON COUPLING REGIME