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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2010    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：221/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Broadband external cavity tunable quantum dot lasers with low injection current density 期刊论文 optics express, 2010, 卷号: 18, 期号: 9, 页码: 8916-8922 作者:  Wang WY;  Jin P 收藏  |  浏览/下载：171/44  |  提交时间：2010/05/24 LIGHT-EMITTING-DIODES  NM TUNING RANGE  SUPERLUMINESCENT DIODES  WELL LASER  EMISSION  SPECTROSCOPY  SPECTRUM   Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure 期刊论文 journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111 Ding Y (Ding Y.); Fan WJ (Fan W. J.); Ma BS (Ma B. S.); Xu DW (Xu D. W.); Yoon SF (Yoon S. F.); Liang S (Liang S.); Zhao LJ (Zhao L. J.); Wasiak M (Wasiak M.); Czyszanowski T (Czyszanowski T.); Nakwaski W (Nakwaski W.) 收藏  |  浏览/下载：31/0  |  提交时间：2010/11/14 VAPOR-PHASE EPITAXY  PHOTOVOLTAGE SPECTROSCOPY  PHOTOLUMINESCENCE  MODES   Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers 期刊论文 japanese journal of applied physics, 2010, 卷号: 49, 期号: 7, 页码: art. no. 072103 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：88/11  |  提交时间：2010/08/17 DEPENDENCE  WELL   A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 018104 作者:  Jin P 收藏  |  浏览/下载：99/17  |  提交时间：2010/04/04 quantum-dot  tunable laser  external cavity  broadband tuning  NM TUNING RANGE  SUPERLUMINESCENT DIODES  LIGHT-SOURCE  WELL LASER  SPECTROSCOPY  SPECTRUM   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：205/54  |  提交时间：2010/04/13 energy states  optical modulation  quantum dot lasers  THRESHOLD CURRENT  WELL  GAIN