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Normal incidence p-i-n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition 期刊论文
optics communications, 2010, 卷号: 283, 期号: 18, 页码: 3404-3407
Zhou ZW (Zhou Zhiwen); He JK (He Jingkai); Wang RC (Wang Ruichun); Li C (Li Cheng); Yu JZ (Yu Jinzhong)
收藏  |  浏览/下载:86/0  |  提交时间:2010/08/17
Effects of AlGaN layer parameter on ultraviolet response of n(+)-GaN/i-AlxGa1 (-) N-x/n(+)-GaN structure ultraviolet-infrared photodetector 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 12, 页码: 8903-8909
作者:  Zhu JJ;  Jiang DS;  Zhao DG;  Deng Y;  Wu LL
收藏  |  浏览/下载:55/2  |  提交时间:2011/07/05


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