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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2009     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers 期刊论文 Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 23 作者:  Yang H (杨辉);  Qiu YX (邱永鑫);  Zhang SM (张书明) 收藏  |  浏览/下载：6/0  |  提交时间：2011/03/14 Room temperature photoluminescence of tensile-strained Ge/Si013Ge087 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 http://dx.doi.org/10.1063/1.3114408, 2009 Chen, YH; Li, C; Zhou, ZW; Lai, HK; Chen, SY; Ding, WC; Cheng, BW; Yu, YD; 李成; 陈松岩 收藏  |  浏览/下载：5/0  |  提交时间：2015/07/22 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength   Room temperature photoluminescence of tensile-strained Ge/Si013Ge087 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 http://dx.doi.org/10.1063/1.3114408, 2009 Chen, Y. H.; Li, C.; Zhou, Z. W.; Lai, H. K.; Chen, S. Y.; Ding, W. C.; Cheng, B. W.; Yu, Y. D.; 陈松岩 收藏  |  浏览/下载：3/0  |  提交时间：2013/12/12 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength   Room temperature photoluminescence of tensile-strained Ge/Si013Ge087 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 http://dx.doi.org/10.1063/1.3114408, 2009 Chen, YH; Li, C; Zhou, ZW; Lai, HK; Chen, SY; Ding, WC; Cheng, BW; Yu, YD; 李成 收藏  |  浏览/下载：3/0  |  提交时间：2013/12/12 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength   Room temperature photoluminescence of tensile-strained ge/si0.13ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 Applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: 3 作者:  Chen, Yanghua;  Li, Cheng;  Zhou, Zhiwen;  Lai, Hongkai;  Chen, Songyan 收藏  |  浏览/下载：56/0  |  提交时间：2019/05/12 Chemical vapour deposition  Elemental semiconductors  Energy gap  Germanium  Ge-si alloys  Photoluminescence  Semiconductor epitaxial layers  Semiconductor quantum wells  Silicon  Tensile strength   Band Engineering in Strained GaN/ultrathin InN/GaN Quantum Wells 期刊论文 http://dx.doi.org/10.1021/cg8003867, 2009 Lin, W.; Benjamin, D.; Li, S. P.; Sekiguchi, T.; Ito, S.; Kang, J. Y.; 康俊勇 收藏  |  浏览/下载：5/0  |  提交时间：2013/12/12 TOTAL-ENERGY CALCULATIONS  WAVE BASIS-SET  PHASE-SEPARATION  INGAN  SEMICONDUCTORS  EPITAXY  GROWTH   Design and epitaxy of structural III-nitrides 期刊论文 http://dx.doi.org/10.1016/j.jcrysgro.2008.09.016, 2009 Li, J. C.; Lin, W.; Yang, W. H.; Cai, W. Z.; Pan, Q. F.; Lin, X. J.; Li, S. P.; Chen, H. Y.; Liu, D. Y.; Cai, J. F.; Yu, X.; Kang, J. Y.; 康俊勇 收藏  |  浏览/下载：2/0  |  提交时间：2013/12/12 TOTAL-ENERGY CALCULATIONS  LIGHT-EMITTING-DIODES  AUGMENTED-WAVE METHOD  BASIS-SET  INGAN   Design and epitaxy of structural III-nitrides 期刊论文 http://dx.doi.org/10.1016/j.jcrysgro.2008.09.016, 2009 Yang,WH; Li,SP; Chen,HY; Li,JC; Kang,JY; Cai,JF; Cai,WZ; Lin,W; Lin,XJ; Yu,X; Liu,DY; Pan,QF; 李书平 收藏  |  浏览/下载：2/0  |  提交时间：2013/12/12 TOTAL-ENERGY CALCULATIONS  LIGHT-EMITTING-DIODES  AUGMENTED-WAVE METHOD  BASIS-SET  INGAN   Gain characteristics of the InGaAs strained quantum wells with GaAs, AlGaAs, and GaAsP barriers in vertical-external-cavity surface-emitting lasers 期刊论文 应用物理杂志, 2009 Zhang, Peng; Song, Yanrong; Tian, Jinrong; Zhang, Xinping; Zhang, Zhigang 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/12 aluminium compounds  band structure  gallium arsenide  gallium compounds  III-V semiconductors  indium compounds  optical pumping  quantum well lasers  surface emitting lasers  PUMPED SEMICONDUCTOR-LASERS  BAND OFFSETS  DISK LASER  HIGH-POWER  ALLOYS  NM   Room temperature photoluminescence of tensile-strained Ge/Si0.13Ge0.87 quantum wells grown on silicon-based germanium virtual substrate 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 14, 页码: art. no. 141902 Chen YH; Li C; Zhou ZW; Lai HK; Chen SY; Ding WC; Cheng BW; Yu YD 收藏  |  浏览/下载：93/14  |  提交时间：2010/03/08 chemical vapour deposition  elemental semiconductors  energy gap  germanium  Ge-Si alloys  photoluminescence  semiconductor epitaxial layers  semiconductor quantum wells  silicon  tensile strength