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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/09
Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 9, 页码: art. no. 095305
作者:  Jia CH;  Zhou XL
收藏  |  浏览/下载:171/27  |  提交时间:2010/03/08
Effect of a step quantum well structure and an electric-field on the Rashba spin splitting 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 11-14
作者:  Hao Guodong;  Chen Yonghai
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/23
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载:236/104  |  提交时间:2010/03/08
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载:310/47  |  提交时间:2010/03/08
Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 4, 页码: art. no. 043709
作者:  Zhang XW;  Yin ZG;  Song HP;  You JB
收藏  |  浏览/下载:80/3  |  提交时间:2010/03/08
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:  Song HP;  Wei HY;  Zhang B
收藏  |  浏览/下载:198/0  |  提交时间:2010/03/08


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