CORC

在结果中检索

CORC

浏览/检索结果: 共38条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
High power diode laser with beam coupling (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Gu Y.; Wang L.; Feng G.; Shan X.; Yin H.; Liu Y.
收藏  |  浏览/下载：52/0  |  提交时间：2013/03/25
As the increasing applications of the semiconductor lasers in the laser processing  the single 2-D stack optic-power density has not satisfied the actual requirements. It demands to couple several diode laser stack beams to one to improve the brightness  and it becomes the central issue to adopt the appropriate beam coupling technology which would offer high quality and high efficiency. In this paper  it mainly introduces the beam shaping and the technology of spatial coupling  polarization coupling  and wavelength coupling. The coupling key elements are presented and indicated. Finally  the development of the diode laser on beam coupling in our country fell behind through analyzing the statement of the world. Our lab is studying on polarization coupling and wavelength coupling. We gain some results by phase  which the polarization coupling efficiency can achieve 90% for two LD stacks with seven bars whose luminous wavelength is 975nm and980nm.By two 808nm diode laser coupling  the efficiency of 60% can be achieved after focusing to the beam size of 22mm2. 2008 SPIE.  
Analysis of spectrum narrowing of diode laser bar - art. no. 68241F 会议论文
2008
Deng X. L.; Liu Y.; Yin H. G.; Feng G. Z.; Gu Y. Y.; Wang L. J.
收藏  |  浏览/下载：8/0  |  提交时间：2013/03/28
Vertical-external-cavity surface-emitting lasers: Numerical simulation, and characterization (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Yan C.; He C.; Lu G.; Qin L.
收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang Y.; Yang Y.; Qin L.; Wang C.; Yao D.; Liu Y.; Wang L.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Wang X.; Li Z.; Liu Y.; Wang Y.; Yao D.; Wang L.
收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25
Analysis of spectrum narrowing of diode laser bar (EI CONFERENCE) 会议论文
Semiconductor Lasers and Applications III, November 12, 2007 - November 13, 2007, Beijing, China
Deng X.; Liu Y.; Yin H.; Feng G.; Gu Y.; Wang L.
收藏  |  浏览/下载：7/0  |  提交时间：2013/03/25
Laser diode bar (LDB) are used increasingly often for many applications  but spectral bandwidth of LDB are generally approximately 2-4nm  far too wide for many demanding applications  e.g. spin-exchange optical pumping  terahertz generation  and lidar. External-cavity feedback can improve the spectral properties of LD or LDB. However  spectrum narrowing of LDB is more difficult than that of LD. Bar curvature (i.e. "smile") produced in the manufacturing process affects the spectrum narrowing greatly. By geometrical optics approach and ORIGIN software  smile which can be corrected by plano-convex cylindrical lens is simulated and the result is in good agreement with experiment. The selection of grating which is also a critical factor of spectrum narrowing will be stated. Finally  an external cavity consisting of fast axis collimator  two plano-convex cylindrical lens and a diffraction grating is used. The scheme is implemented on a 19-element LDB and yields 3-fold reduction in spectral linewidth under the situation that all optical elements in the system which are not optimized. Further  we use a slit in the experiment and analyze the spectrum narrowing of each element in LDB.  
Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
Liang X.; Qin L.; He C.; Ma Q.; Ning Y.; Wang L.
收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25
Study on chroma balance based on grating spectrometer for LED (EI CONFERENCE) 会议论文
Light-Emitting Diode Materials and Devices II, November 12, 2007 - November 14, 2007, Beijing, China
Sun W.-J.; Wang S.-Y.; Yin Y.-Z.; Rong X.-W.; Meng Z.
收藏  |  浏览/下载：19/0  |  提交时间：2013/03/25
A standard white light compounding algorithm based on combination of choma coordinates acquisition system with computer working current control system is presented for three-color LED. The chroma coordinates acquisition system consist of grating spectrometer and integrating sphere. The computer adjust and control the working current of three-color LED  then achieved chroma coordinates error between the compounded white light and standard white light D65  until the chroma coordinates is less than the threshold beforehand set by this technique. The compounded white light meet the chroma error demanded that is able to be changed  at the same time the chroma coordinates acquisition system and the working current control system are eliminated. The proposed algorithm the offset of central wavelength and the change of chroma coordinates due to working current variety for LEDs. Experimental results show that the proposed algorithm achieved lesser chroma error uv=0.001 relative to standard white light D65  enhanced chroma uniformity of illumination field.  
In Situ Measurement and Validation of Gaseous Species Concentrations of a Gas Turbine Model Combustor by Tunable Diode Laser Absorption Spectroscopy (TDLAS) 会议论文
ASME:Controls, Diagnostics and Instrumentation, 2008
Christoph Hassa, Thomas Behrendt, Ajmal Mohamed, and Jean-Pierre Faleni
收藏  |  浏览/下载：14/0  |  提交时间：2011/11/28
Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode 会议论文
Hu, Xin; Tang, Shaoqiang; Leroux, Maxime
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/13

©版权所有 ©2017 CSpace - Powered by CSpace