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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2006     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Different temperature and pressure behavior of band edge and n-cluster emissions in gaas0.973sb0.022n0.005 期刊论文 Physical review b, 2006, 卷号: 74, 期号: 19, 页码: 6 作者:  Wang, W. J.;  Su, F. H.;  Ding, K.;  Li, G. H.;  Yoon, S. F. 收藏  |  浏览/下载：21/0  |  提交时间：2019/05/12 Effect of nonradiative recombination on carrier dynamics in gainnas/gaas quantum wells 期刊论文 Chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569 作者:  Sun Zheng;  Wang Bao-Rui;  Xu Zhong-Ying;  Sun Bao-Quan;  Ji Yang 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Nonradiative recombination effect on photoluminescence decay dynamics in gainnas/gaas quantum wells 期刊论文 Applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: 3 作者:  Sun, Z;  Xu, ZY;  Yang, XD;  Sun, BQ;  Ji, Y 收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12 Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: art.no.011912 Sun Z; Xu ZY; Yang XD; Sun BQ; Ji Y; Zhang SY; Ni HQ; Niu ZC 收藏  |  浏览/下载：97/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  GAASN ALLOYS   Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569 Sun Z (Sun Zheng); Wang BR (Wang Bao-Rui); Xu ZY (Xu Zhong-Ying); Sun BQ (Sun Bao-Quan); Ji Y (Ji Yang); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：62/0  |  提交时间：2010/04/11 TIME-RESOLVED PHOTOLUMINESCENCE  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION