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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2006    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：98/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER   Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文 14th international conference on ion beam modification of materials (ibmm 2004), pacific grove, ca, sep 05-10, 2004 Zhang EX; Sun JY; Chen J; Chen M; Zhang ZX; Li N; Zhang GQ; Wang X 收藏  |  浏览/下载：215/45  |  提交时间：2010/03/29 nitrogen   Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文 3rd asian conference on chemical vapor deposition, taipei, taiwan, nov 12-14, 2004 Kong LM; Cai JF; Wu ZY; Gong Z; Niu ZC; Feng ZC 收藏  |  浏览/下载：166/29  |  提交时间：2010/03/29 time-resolved photoluminescence   Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文 conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006 Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.) 收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29 GaInNAs/GaAs quantum wells  optical properties  nonradiative recombination effect  time-resolved photoluminescence  PL decay dynamics  PL thermal quenching  MOLECULAR-BEAM EPITAXY  GAASN ALLOYS  EXCITATION