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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：118/30  |  提交时间：2010/03/29 HIGH BREAKDOWN VOLTAGE  MOBILITY TRANSISTORS  HETEROSTRUCTURES  SAPPHIRE  GANHEMTS   Research on the band-gap of InN grown on siticon substrates 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏  |  浏览/下载：100/15  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  WURTZITE INN  NITRIDE  ABSORPTION  ALLOYS  FILMS   The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM 收藏  |  浏览/下载：166/71  |  提交时间：2010/03/29 ALN  IMPURITIES  DONOR   Deep levels in high resistivity GaN epilayers grown by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Fang, CB; Wang, XL; Wang, JX; Liu, C; Wang, CM; Hu, GX; Li, JP; Li, CJ 收藏  |  浏览/下载：114/18  |  提交时间：2010/03/29 THERMALLY STIMULATED CURRENT  GALLIUM NITRIDE  DEFECTS   Raman scattering study on vibrational modes in Ga1-xMnxN prepared by Mn-ion implantation 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Islam MR; Chen NF; Yamada M 收藏  |  浏览/下载：126/8  |  提交时间：2010/03/29 Raman scattering   Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 作者:  Xu B 收藏  |  浏览/下载：134/15  |  提交时间：2010/03/29 Monte Carlo simulation   Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Wang, XL; Wang, CM; Hu, GX; Wang, JX; Li, JP 收藏  |  浏览/下载：154/51  |  提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY  2-DIMENSIONAL ELECTRON-GAS  BULK GAN  OPTIMIZATION  LAYERS  HEMTS   Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhou HY; Qu SC; Wang ZG; Liang LY; Cheng BC; Liu JP; Peng WQ 收藏  |  浏览/下载：132/26  |  提交时间：2010/03/29 anodic alumina films   Structure and visible luminescence of ZnO nanoparticles 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Peng, WQ (Peng, W. Q.); Qu, SC (Qu, S. C.); Cong, GW (Cong, G. W.); Wang, ZG (Wang, Z. G.) 收藏  |  浏览/下载：202/42  |  提交时间：2010/03/29 nanoparticles   Electron irradiation-induced defects in InP pre-annealed at high temperature 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.) 收藏  |  浏览/下载：158/28  |  提交时间：2010/03/29 indium phosphide