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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 发表日期：2005    学科主题：微电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides 期刊论文 半导体学报, 2005, 卷号: 26, 期号: 5, 页码: 862-866 Zheng Zhongshan; Liu Zhongli; Zhang Guoqiang; Li Ning; Li Guohua; Ma Hongzhi; Zhang Enxia; Zhang Zhengxuan; Wang Xi 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/23 Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 3, 页码: 654-656 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：108/0  |  提交时间：2010/03/17 SCATTERING   Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文 acta physica sinica, 2005, 卷号: 54, 期号: 1, 页码: 348-353 Zheng ZS; Liu ZL; Zhang GQ; Li N; Fan K; Zhang EX; Yi WB; Chen M; Wang X 收藏  |  浏览/下载：33/0  |  提交时间：2010/03/17 SOI   Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文 semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 481-484 Zheng ZS; Liu ZL; Zhang GQ; Li N; Li GH; Ma HZ; Zhang EX; Zhang ZX; Wang X 收藏  |  浏览/下载：32/5  |  提交时间：2010/03/17 OXIDES   Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation 期刊论文 journal of electronic materials, 2005, 卷号: 34, 期号: 11, 页码: l53-l56 Zhang EX; Sun JY; Chen J; Zhang ZX; Wang X; Li N; Zhang GQ; Liu ZL 收藏  |  浏览/下载：193/29  |  提交时间：2010/03/17 silicon-on-insulator (SOI)