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Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Hao, HY; Zhang, SB; Xu, YY; Zeng, XB; Diao, HW; Kong, GL; Liao, XB
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