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High current gain In0.49Ga0.51P/GaAs heterojunction bipolar transistors with double spacers grown by gas source molecular beam epitaxy 期刊论文
CHINESE PHYSICS LETTERS, 2000, 卷号: 17, 期号: 12, 页码: 915-917
Chen, XJ; Chen, JX; Chen, YQ; Peng, P; Yang, QK; Li, AZ
收藏  |  浏览/下载:8/0  |  提交时间:2012/03/24
Proton implant isolation of AlGaInP/GaAs heterojunction bipolar transistor structures in fabrication 期刊论文
ACTA PHYSICA SINICA, 2000, 卷号: 49, 期号: 2, 页码: 375-378
Cheng, ZQ; Sun, XW; Xia, GQ; Li, HQ; Sheng, HM; Qian, R
收藏  |  浏览/下载:14/0  |  提交时间:2011/12/17
Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction 期刊论文
ACTA PHYSICA SINICA, 2000, 卷号: 49, 期号: 12, 页码: 2466-2471
Peng, YC; Xu, GY; He, YL; Liu, M; Li, YX
收藏  |  浏览/下载:10/0  |  提交时间:2012/03/24


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