Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers

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	Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers
	Ren, Shengdong 1,2,3; Li, Bincheng 1,2; Wang, Qian 1,2,3
刊名	INTERNATIONAL JOURNAL OF THERMOPHYSICS
	2015-06-01
卷号	36 期号:5-6 页码:1045-1050
关键词	Carrier effective lifetime Photocarrier radiometry Silicon Thermal annealing
英文摘要	The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (C to C) silicon samples with arsenic ion (As implantation of cm dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above C and 30 s) of As implanted silicon samples were observed and analyzed.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]	Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]	SI
收录类别	SCI
语种	英语
WOS记录号	WOS:000356611100032
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/3665]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Optic & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Chinese Acad Sci, Key Lab Opt Engn, Chengdu 610209, Sichuan, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Ren, Shengdong,Li, Bincheng,Wang, Qian. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1045-1050.
APA	Ren, Shengdong,Li, Bincheng,&Wang, Qian.(2015).Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers.INTERNATIONAL JOURNAL OF THERMOPHYSICS,36(5-6),1045-1050.
MLA	Ren, Shengdong,et al."Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers".INTERNATIONAL JOURNAL OF THERMOPHYSICS 36.5-6(2015):1045-1050.