Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation

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	Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation
	Wang, Qian 1,2; Li, Bincheng 1; Ren, Shengdong 1,2; Wang, Qiang 1
刊名	INTERNATIONAL JOURNAL OF THERMOPHYSICS
	2015-06-01
卷号	36 期号:5-6 页码:1173-1180
关键词	Ion implantation Laser irradiation Photocarrier radiometry Silicon Ultra-shallow junction
英文摘要	The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193 nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Thermodynamics ; Chemistry, Physical ; Mechanics ; Physics, Applied
研究领域[WOS]	Thermodynamics ; Chemistry ; Mechanics ; Physics
关键词[WOS]	BORON
收录类别	SCI
语种	英语
WOS记录号	WOS:000356611100050
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/3663]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Wang, Qian,Li, Bincheng,Ren, Shengdong,et al. Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation[J]. INTERNATIONAL JOURNAL OF THERMOPHYSICS,2015,36(5-6):1173-1180.
APA	Wang, Qian,Li, Bincheng,Ren, Shengdong,&Wang, Qiang.(2015).Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation.INTERNATIONAL JOURNAL OF THERMOPHYSICS,36(5-6),1173-1180.
MLA	Wang, Qian,et al."Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation".INTERNATIONAL JOURNAL OF THERMOPHYSICS 36.5-6(2015):1173-1180.