Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers

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	Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers
	Ren, Shengdong 1,2; Li, Bincheng 1; Huang, Qiuping 1,2
刊名	JOURNAL OF APPLIED PHYSICS
	2013-12-28
卷号	114 期号:24
英文摘要	A three-dimensional transient model for time-domain (modulated) free-carrier absorption (FCA) measurement was developed to describe the transport dynamics of photo-generated excess carriers in silicon (Si) wafers. With the developed transient model, numerical simulations were performed to investigate the dependences of the waveforms of the transient FCA signals on the electronic transport parameters of Si wafers and the geometric parameters of the FCA experiment. Experimental waveforms of FCA signals of both n- and p-type Si wafers with resistivity ranging 1-38 Omega.cm were then fitted to the three-dimensional transient model to extract simultaneously and unambiguously the transport parameters of Si wafers, namely, the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity via multi-parameter fitting. A basic agreement between the extracted parameter values and the literature values was obtained. (C) 2013 AIP Publishing LLC.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
关键词[WOS]	SURFACE RECOMBINATION ; BULK LIFETIME ; VELOCITIES ; PRINCIPLE
收录类别	SCI
语种	英语
WOS记录号	WOS:000329173200029
公开日期	2015-12-24
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/1204]
专题	光电技术研究所_光电技术研究所被WoS收录文章
作者单位	1.Chinese Acad Sci, Inst Opt & Elect, Chengdu 610209, Sichuan, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
推荐引用方式 GB/T 7714	Ren, Shengdong,Li, Bincheng,Huang, Qiuping. Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers[J]. JOURNAL OF APPLIED PHYSICS,2013,114(24).
APA	Ren, Shengdong,Li, Bincheng,&Huang, Qiuping.(2013).Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers.JOURNAL OF APPLIED PHYSICS,114(24).
MLA	Ren, Shengdong,et al."Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers".JOURNAL OF APPLIED PHYSICS 114.24(2013).