Cubic MgxZn1-xO films grown on Si(111)

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所(2010年前)

	Cubic MgxZn1-xO films grown on Si(111)
	Qiu, DJ ; Wu, HZ ; Chen, NB ; Tian, WJ
刊名	journal of inorganic materials
	2003-11-01
卷号	18 期号:6 页码:1385-1388
关键词	reactive e-beam evaporation cubic MgxZn1-xO film
其他题名	si（111）衬底上生长的立方mg2zn1－xo晶体薄膜
英文摘要	epitaxy of the cubic mgxzn1-xo thin films on si (111) was achieved by the reactive electron beam evaporation for the first time. energy dispersive x-ray detection (edx) and x-ray diffraction (xrd) were employed to characterize the as-grown films. the orientation of cubic mgxzn1-xo films relies on the growth temperature and the highly (200) oriented mgxzn1-xo films are attainable, only at the optimal growth temperature of about 200degreesc. photoluminescence excitation (ple) spectroscopic measurement demonstrates that the optical absorption band edge of the cubic mgxzn1-xo is at 4.20ev, which is 3.50ev lower than the band gap of mgo. furthermore, xrd measurements indicate the lattice mismatch between cubic mgxzn1-xo and mgo is only 0.16%. the successful growth of high quality mgxzn1-xo renders the fabrication of cubic phase mgxzn1-xo/mgo multiple quantum wells possible.
WOS标题词	science & technology ; technology
类目[WOS]	materials science, ceramics
研究领域[WOS]	materials science
关键词[WOS]	zno/znmgo multiquantum wells ; room-temperature ; zno ; efficiency ; alloy
收录类别	SCI
语种	中文
WOS记录号	WOS:000187912100041
公开日期	2015-11-17
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/25458]
专题	西安光学精密机械研究所_中国科学院西安光学精密机械研究所(2010年前)
作者单位	1.Zhejiang Univ, Dept Phys, Hangzhou 310028, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
推荐引用方式 GB/T 7714	Qiu, DJ,Wu, HZ,Chen, NB,et al. Cubic MgxZn1-xO films grown on Si(111)[J]. journal of inorganic materials,2003,18(6):1385-1388.
APA	Qiu, DJ,Wu, HZ,Chen, NB,&Tian, WJ.(2003).Cubic MgxZn1-xO films grown on Si(111).journal of inorganic materials,18(6),1385-1388.
MLA	Qiu, DJ,et al."Cubic MgxZn1-xO films grown on Si(111)".journal of inorganic materials 18.6(2003):1385-1388.