Application of BEM to high-voltage junction termination

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	Application of BEM to high-voltage junction termination
	Wu, ZL ; Gao, YM ; Luo, JS ; Hou, X ; Chen, GF
刊名	ieee transactions on computer-aided design of integrated circuits and systems
	2001-10-01
卷号	20 期号:10 页码:1218-1225
关键词	boundary element method critical electric field junction termination simulation SOI
英文摘要	ideas for using the boundary element method (bem) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. approaches for dealing with interface charges, depleted regions, and metal field plates are presented. rules used to develop and apply the bem program are given. simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method.
WOS标题词	science & technology ; technology
类目[WOS]	computer science, hardware & architecture ; computer science, interdisciplinary applications ; engineering, electrical & electronic
研究领域[WOS]	computer science ; engineering
关键词[WOS]	boundary-element method ; field plate ; breakdown ; diodes
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000171240900003
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/25440]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt Technol, Xian 710068, Peoples R China 2.Xian Jiaotong Univ, Microelect Dept, Xian 710049, Peoples R China
推荐引用方式 GB/T 7714	Wu, ZL,Gao, YM,Luo, JS,et al. Application of BEM to high-voltage junction termination[J]. ieee transactions on computer-aided design of integrated circuits and systems,2001,20(10):1218-1225.
APA	Wu, ZL,Gao, YM,Luo, JS,Hou, X,&Chen, GF.(2001).Application of BEM to high-voltage junction termination.ieee transactions on computer-aided design of integrated circuits and systems,20(10),1218-1225.
MLA	Wu, ZL,et al."Application of BEM to high-voltage junction termination".ieee transactions on computer-aided design of integrated circuits and systems 20.10(2001):1218-1225.