Investigation of Local Tunneling Current Noise Spectra on the Silicon Crystal Surfaces by Means of STM/STS

CORC > 武汉物理与数学研究所 > 中国科学院武汉物理与数学研究所 > 2011年以前论文发表（包括2011年）

	Investigation of Local Tunneling Current Noise Spectra on the Silicon Crystal Surfaces by Means of STM/STS
	Mantsevich, V. N.1; Maslova, N. S.1; Cao, G. Y.2
刊名	JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
	2015-08-01
卷号	121 期号:2 页码:259-262
英文摘要	We report on a careful analysis of the local tunneling conductivity by means of ultra-high vacuum scanning tunneling microscopy/spectroscopy (STM/STS) technique in the vicinity of low-dimensional structures on the Si(111)-(7 x 7) and Si(110)-(16 x 2) surfaces. The power-law exponent alpha of low-frequency tunneling current noise spectra is investigated for different values of the tunneling contact parameters: relaxation rates, the localized state coupling, and the tunneling barrier width and height.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
关键词[WOS]	MICROSCOPY
收录类别	SCI
语种	英语
WOS记录号	WOS:000361441400012
公开日期	2015-11-03
内容类型	期刊论文
源URL	[http://ir.wipm.ac.cn/handle/112942/8171]
专题	武汉物理与数学研究所_2011年以前论文发表（包括2011年）
作者单位	1.Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia 2.Chinese Acad Sci, Wuhan Inst Phys & Math, Beijing 100864, Peoples R China
推荐引用方式 GB/T 7714	Mantsevich, V. N.,Maslova, N. S.,Cao, G. Y.. Investigation of Local Tunneling Current Noise Spectra on the Silicon Crystal Surfaces by Means of STM/STS[J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS,2015,121(2):259-262.
APA	Mantsevich, V. N.,Maslova, N. S.,&Cao, G. Y..(2015).Investigation of Local Tunneling Current Noise Spectra on the Silicon Crystal Surfaces by Means of STM/STS.JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS,121(2),259-262.
MLA	Mantsevich, V. N.,et al."Investigation of Local Tunneling Current Noise Spectra on the Silicon Crystal Surfaces by Means of STM/STS".JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS 121.2(2015):259-262.