Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics

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	Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics
	Wan, Chang Jin ; Zhu, Li Qiang ; Zhou, Ju Mei ; Shi, Yi ; Wan, Qing
刊名	NANOSCALE
	2014
卷号	6 期号:9 页码:4491
中文摘要	Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/12029]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Wan, Chang Jin,Zhu, Li Qiang,Zhou, Ju Mei,et al. Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics[J]. NANOSCALE,2014,6(9):4491.
APA	Wan, Chang Jin,Zhu, Li Qiang,Zhou, Ju Mei,Shi, Yi,&Wan, Qing.(2014).Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.NANOSCALE,6(9),4491.
MLA	Wan, Chang Jin,et al."Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics".NANOSCALE 6.9(2014):4491.