Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs

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	Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs
	Wan Xiang ; Liu Yang-Hui ; Zhang Hong-Liang
刊名	JOURNAL OF INORGANIC MATERIALS
	2014
卷号	29 期号:5 页码:482
中文摘要	Porous SiO2 films were deposited by plasma enhanced chemical vapor deposition and were treated by H3PO4 solution with various concentrations. Then indium-zinc-oxide (IZO) electric-double-layer thin-film transistors (EDL-TFTs) were fabricated by using such porous SiO2 films as the gate dielectrics. The effects of H3PO4 treatments on the proton conductivity and EDL capacitance of porous SiO2 films and on the performances of EDL-TFTs were investigated systematically. The proton conductivity and EDL capacitance of SiO2 films increase with the H3PO4 concentration increase. A high proton conductivity of 1.51 x 10(-4) S/cm and a large EDL capacitance of 6.33 mu F/cm(2) are obtained for porous SiO2 films which were treated with 60% H3PO4 solution. The operating voltage decreases and the on/off ratio increases with the increasing H3PO4 concentration. The EDL-TFTs gated by porous SiO2 films treated with 60% H3PO4 solution show the best performance with a low operating voltage of 1.2 V, a high mobility of 20 cm(2)/(V.s), and a large on/off ratio of 4 x 10(6). Such EDL-TFTs are promising for biosensors and chemical senors in the future.
公开日期	2015-09-20
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/11857]
专题	宁波材料技术与工程研究所_2014专题
推荐引用方式 GB/T 7714	Wan Xiang,Liu Yang-Hui,Zhang Hong-Liang. Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs[J]. JOURNAL OF INORGANIC MATERIALS,2014,29(5):482.
APA	Wan Xiang,Liu Yang-Hui,&Zhang Hong-Liang.(2014).Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs.JOURNAL OF INORGANIC MATERIALS,29(5),482.
MLA	Wan Xiang,et al."Effects of H3PO4 Treated Porous SiO2 on Proton Conductivity and Performances of EDL-TFTs".JOURNAL OF INORGANIC MATERIALS 29.5(2014):482.