Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

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	Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations
	Guo HJ(郭慧君); Huang W(黄维); Liu X(刘熙); Gao P(高攀); Zhuo SY(卓世异); Xin J(忻隽); Yan CF(严成锋); Zheng YQ(郑燕青); Yang JH(杨建华); Shi EW(施尔畏)
刊名	AIP ADVANCES
	2014-09-08
期号	4 页码:097106-1
学科主题	人工晶体
语种	英语
WOS记录号	WOS:000342809700006
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/6232]
专题	上海硅酸盐研究所_中试基地_期刊论文
推荐引用方式 GB/T 7714	Guo HJ,Huang W,Liu X,et al. Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations[J]. AIP ADVANCES,2014(4):097106-1.
APA	Guo HJ.,Huang W.,Liu X.,Gao P.,Zhuo SY.,...&Shi EW.(2014).Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations.AIP ADVANCES(4),097106-1.
MLA	Guo HJ,et al."Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations".AIP ADVANCES .4(2014):097106-1.