The facet passivation characteristic of 940nm semiconductor laser

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出 > 会议论文

	The facet passivation characteristic of 940nm semiconductor laser
	Li Z. J. ; Zheng X. G. ; Li T. ; Qu Y. ; Bo B. X. ; Liu G. J. ; Ma X. H. ; Wang M.
	2014
会议名称	2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013
会议地点	Singapore
页码	278-282
英文摘要	A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology, semiconductor laser are cleaved in the air, and the surface oxide layer is removed with a low energy ion source, immediately flowed by coating the facet with 20nm of thin ZnSe passivation layer. The function of the passivation layer is to protect semiconductor laser facet, and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results of semiconductor laser output power show that output power with the coated ZnSe passivation layer method is 12% higher than coated Si passivation layer, and 36% higher than that coated oxidative optical film. The device coated oxidative optical film is failed when current is 4.1A, and the device coated with Si passivation layer is failed when current is 4.8A, the final failed of the device is coated ZnSe passivation layer. In conclusion, the method of coated ZnSe passivation layer on the semiconductor laser facet can effectively prevent the catastrophic optical mirror damage, and increase the output power of semiconductor lasers. (2014) Trans Tech Publications, Switzerland.
收录类别	EI
会议录	2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013
会议录出版者	Trans Tech Publications Ltd
会议录出版地	Singapore
语种	英语
内容类型	会议论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/44543]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出_会议论文
推荐引用方式 GB/T 7714	Li Z. J.,Zheng X. G.,Li T.,et al. The facet passivation characteristic of 940nm semiconductor laser[C]. 见:2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013, December 1, 2013 - December 2, 2013. Singapore.