Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)
	Schnedler, M ; Jiang, Y ; Wu, KH ; Wang, EG ; Dunin-Borkowski, RE ; Ebert, P
刊名	SURFACE SCIENCE
	2014
卷号	630 页码:225
关键词	Effective mass Scanning tunneling spectroscopy Surface state
ISSN号	0039-6028
通讯作者	Ebert, P (reprint author), Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany.
中文摘要	The effective mass of the empty conduction band surface state of a single atomic root 3 x root 3 Ga layer on Si(111) is determined using scanning tunneling spectra. The methodology is based on calculating the tunnel current using its dependence on the effective density of state mass and a parabolic band approximation followed by fitting to the measured tunneling spectra. An effective mass of m(eff,c) = 0.59 +/- 0.06 is obtained, in good agreement with a band structure calculation and inverse photo electron spectroscopy data. (C) 2014 Elsevier B.V. All rights reserved.
资助信息	National Basic Research Programs of China; National Science Foundation of China
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59762]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Schnedler, M,Jiang, Y,Wu, KH,et al. Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)[J]. SURFACE SCIENCE,2014,630:225.
APA	Schnedler, M,Jiang, Y,Wu, KH,Wang, EG,Dunin-Borkowski, RE,&Ebert, P.(2014).Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111).SURFACE SCIENCE,630,225.
MLA	Schnedler, M,et al."Effective mass of a two-dimensional root 3 x root 3 Ga single atomic layer on Si(111)".SURFACE SCIENCE 630(2014):225.