Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

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	Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors
	Liu, XH ; Zhou, XH ; Li, N ; Wang, L ; Sun, QL ; Liao, KS ; Huang, L ; Li, Q ; Li, ZF ; Chen, PP ; Lu, W
刊名	JOURNAL OF APPLIED PHYSICS
	2014
卷号	115 期号:12
ISSN号	0021-8979
通讯作者	Zhou, XH (reprint author), Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China.
中文摘要	The temperature-and bias-dependent photocurrent spectra of very long wavelength GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations. It is found that the peak response wavelength will shift as the bias and temperature change. Aided by band structure calculations, we propose a model of the double excited states and explain the experimental observations very well. In addition, the working mechanisms of the quasi-bound state confined in the quantum well, including the processes of tunneling and thermionic emission, are also investigated in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. These obtained results provide a full understanding of the bound-to-quasi-bound state and the bound-to-quasi-continuum state transition, and thus allow for a better optimization of QWIPs performance. (C) 2014 AIP Publishing LLC.
资助信息	State Key Development Program for Basic Research of China [2013CB632802, 2011CB925604]; National Natural Science Foundation of China [61376053]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59163]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Liu, XH,Zhou, XH,Li, N,et al. Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors[J]. JOURNAL OF APPLIED PHYSICS,2014,115(12).
APA	Liu, XH.,Zhou, XH.,Li, N.,Wang, L.,Sun, QL.,...&Lu, W.(2014).Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors.JOURNAL OF APPLIED PHYSICS,115(12).
MLA	Liu, XH,et al."Effects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors".JOURNAL OF APPLIED PHYSICS 115.12(2014).