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Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions
Mao, HJ ; Miao, PX ; Cong, JZ ; Song, C ; Cui, B ; Peng, JJ ; Li, F ; Wang, GY ; Zhao, YG ; Sun, Y ; Xiao, LR ; Pan, F
刊名JOURNAL OF APPLIED PHYSICS
2014
卷号116期号:5
ISSN号0021-8979
通讯作者Song, C (reprint author), Tsinghua Univ, Sch Mat Sci & Engn, Key Lab Adv Mat MOE, Beijing 100084, Peoples R China.
中文摘要We report a large tunnel electroresistance (TER) effect up to similar to 10(4)% in La0.67Sr0.33MnO3/BaTiO3/Co (LSMO/BTO/Co) multiferroic tunnel junctions (MFTJs), which couples with well-defined tunnel magnetoresistance. The large TER is related to (LaAlO3)(0.3)(LaSrTaO6)(0.7) substrates which guarantee a high-quality LSMO/BTO interface and robust ferroelectricity in BTO. The insert of 0.5 nm-thick Pt between the Co electrode and BTO barrier further enhances the TER value to 10(5)% and improves the endurance of the MFTJs, ascribed to the shortened screening length and reduced oxidation of BTO/Co interface. Their use would advance the process towards practical MFTJs with four resistance states. (C) 2014 AIP Publishing LLC.
资助信息National Natural Science Foundation of China [51202125, 51322101, 51231004]; National Hi-tech (R&D) project of China [2014AA032901, 2014AA032904]
语种英语
公开日期2015-04-14
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/59140]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Mao, HJ,Miao, PX,Cong, JZ,et al. Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions[J]. JOURNAL OF APPLIED PHYSICS,2014,116(5).
APA Mao, HJ.,Miao, PX.,Cong, JZ.,Song, C.,Cui, B.,...&Pan, F.(2014).Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions.JOURNAL OF APPLIED PHYSICS,116(5).
MLA Mao, HJ,et al."Interface-modification-enhanced tunnel electroresistance in multiferroic tunnel junctions".JOURNAL OF APPLIED PHYSICS 116.5(2014).
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