Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a root 3x root 3-Ga Buffer Layer

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	Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a root 3x root 3-Ga Buffer Layer
	He, JH ; Jiang, LQ ; Qiu, JL ; Chen, L ; Wu, KH
刊名	CHINESE PHYSICS LETTERS
	2014
卷号	31 期号:12
ISSN号	0256-307X
通讯作者	He, JH (reprint author), Hunan Univ Humanities Sci & Technol, Dept Informat Sci & Engn, Loudi 417000, Peoples R China.
中文摘要	It is known that, when Ag is deposited on Si(111)-7x7 substrates in a conventional growth procedure at room temperature, no atomically flat Ag film could be obtained. We use scanning tunneling microscopy and low-energy electron diffraction to investigate the growth of ultra-thin Ag films on the Si(111) substrates at room temperature. Our study reveals that, upon introducing a Si(111)-root 3x root 3-Ga buffer layer, atomically flat Ag films can easily grow on Si(111) with a critical thickness of two monolayers. Moreover, Ag film growth follows a layer-by-layer mode with further deposition. This novel growth behavior of Ag can be explained in terms of a free electron model (i.e., particle in a box) and kinetic Monte Carlo simulations.
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59018]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	He, JH,Jiang, LQ,Qiu, JL,et al. Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a root 3x root 3-Ga Buffer Layer[J]. CHINESE PHYSICS LETTERS,2014,31(12).
APA	He, JH,Jiang, LQ,Qiu, JL,Chen, L,&Wu, KH.(2014).Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a root 3x root 3-Ga Buffer Layer.CHINESE PHYSICS LETTERS,31(12).
MLA	He, JH,et al."Growth of Atomically Flat Ultra-Thin Ag Films on Si(111) by Introducing a root 3x root 3-Ga Buffer Layer".CHINESE PHYSICS LETTERS 31.12(2014).