Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure

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	Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure
	Yin, HX ; Zhu, CR ; Shen, Y ; Yang, HF ; Liu, Z ; Gu, CZ ; Liu, BL ; Xu, XG
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104 期号:6
ISSN号	0003-6951
通讯作者	Yang, HF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	Three-dimensional (3D) periodic micro/nanostructures can have a remarkable enhancement effect on light-emitting diodes (LEDs). However, simple, high-throughput and large-area fabrication of 3D periodic micro/nanostructures with a high duty ratio is difficult. In this Letter, high-duty-ratio 3D semi-spherical structures were fabricated on the surface of n-GaN-based vertical-structure LEDs by under-exposure ultraviolet lithography and dry etching. The resulting LEDs provide about 200% more light output power than those with a flat surface. This method of fabricating high-duty-ratio 3D semi-spherical structures could be used in other optical devices and shows potential for industrial production and commercialization. (C) 2014 AIP Publishing LLC.
资助信息	National Basic Research Program of China [2009CB930500]; National Natural Science Foundation of China [1083401, 91023041, 61001045, 11174362]; Knowledge Innovation Project of CAS [KJCX2-EW-W02]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58928]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Yin, HX,Zhu, CR,Shen, Y,et al. Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure[J]. APPLIED PHYSICS LETTERS,2014,104(6).
APA	Yin, HX.,Zhu, CR.,Shen, Y.,Yang, HF.,Liu, Z.,...&Xu, XG.(2014).Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure.APPLIED PHYSICS LETTERS,104(6).
MLA	Yin, HX,et al."Enhanced light extraction in n-GaN-based light-emitting diodes with three-dimensional semi-spherical structure".APPLIED PHYSICS LETTERS 104.6(2014).