Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy

CORC > 物理研究所 > 物理所公开发表论文 > 期刊论文

	Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy
	Wen, C ; Ge, BH ; Cui, YX ; Li, FH ; Zhu, J ; Yu, R ; Cheng, ZY
刊名	AIP ADVANCES
	2014
卷号	4 期号:11
ISSN号	2158-3226
通讯作者	Wen, C (reprint author), Southwest Univ Sci & Technol, Sch Sci, Lab Extreme Condit Matter Properties, Mianyang 621010, Peoples R China.
中文摘要	The stacking faults (SFs) in an AlSb/GaAs (001) interface were investigated using a 300 kV spherical aberration-corrected high-resolution transmission electron microscope (HRTEM). The structure and strain distribution of the single and intersecting (V-shaped) SFs associated with partial dislocations (PDs) were characterized by the [ 110] HRTEM images and geometric phase analysis, respectively. In the biaxial strain maps epsilon(xx) and epsilon(yy), a SF can be divided into several sections under different strain states (positive or negative strain values). Furthermore, the strain state for the same section of a SF is in contrast to each other in epsilon(xx) and epsilon(yy) strain maps. The modification in the strain states was attributed to the variation in the local atomic displacements for the SF in the AlSb film on the GaAs substrate recorded in the lattice image. Finally, the single SF was found to be bounded by two 30 degrees PDs. A pair of 30 degrees PDs near the heteroepitaxial interface reacted to form a Lomer-Cottrell sessile dislocation located at the vertices of V-shaped SFs with opposite screw components. The roles of misfit dislocations, such as the PDs, in strain relaxation were also discussed. (C) 2014 Author( s).
资助信息	National Natural Science Foundation of China [11104226, 10874207, 11104327]; Special Funds for Major State Basic Research Projects [2010CB934200]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58847]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wen, C,Ge, BH,Cui, YX,et al. Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy[J]. AIP ADVANCES,2014,4(11).
APA	Wen, C.,Ge, BH.,Cui, YX.,Li, FH.,Zhu, J.,...&Cheng, ZY.(2014).Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy.AIP ADVANCES,4(11).
MLA	Wen, C,et al."Evaluation of stacking faults and associated partial dislocations in AlSb/GaAs (001) interface by aberration-corrected high-resolution transmission electron microscopy".AIP ADVANCES 4.11(2014).