An Epitaxial Ferroelectric Tunnel Junction on Silicon

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	An Epitaxial Ferroelectric Tunnel Junction on Silicon
	Li, ZP ; Guo, X ; Lu, HB ; Zhang, ZL ; Song, DS ; Cheng, SB ; Bosman, M ; Zhu, J ; Dong, ZL ; Zhu, WG
刊名	ADVANCED MATERIALS
	2014
卷号	26 期号:42 页码:7185
关键词	ferroelectric tunnel junction non-volatile memory tunneling electroresistance epitaxial growth pulsed laser deposition
ISSN号	0935-9648
通讯作者	Lu, HB (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
资助信息	Science and Engineering Research Council (SERC) of Singapore Agency for Science, Technology and Research (A*STAR) [102 101 0019]; Office of China Postdoctoral Council under the International Postdoctoral Exchange Fellowship Program
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58829]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, ZP,Guo, X,Lu, HB,et al. An Epitaxial Ferroelectric Tunnel Junction on Silicon[J]. ADVANCED MATERIALS,2014,26(42):7185.
APA	Li, ZP.,Guo, X.,Lu, HB.,Zhang, ZL.,Song, DS.,...&Zhu, WG.(2014).An Epitaxial Ferroelectric Tunnel Junction on Silicon.ADVANCED MATERIALS,26(42),7185.
MLA	Li, ZP,et al."An Epitaxial Ferroelectric Tunnel Junction on Silicon".ADVANCED MATERIALS 26.42(2014):7185.