Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)

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	Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)
	Wan, W ; Li, H ; Huang, H ; Wong, SH ; Lv, L ; Gao, YL ; Wee, ATS
刊名	ACS NANO
	2014
卷号	8 期号:1 页码:970
关键词	molybdenum epitaxial graphene silicon carbide scanning tunneling microscopy density functional theory
ISSN号	1936-0851
通讯作者	Huang, H (reprint author), Cent S Univ, Sch Phys & Elect, Inst Super Microstruct & Ultrafast Proc Adv Mat, Changsha 410083, Hunan, Peoples R China.
中文摘要	The atomic structures and electronic properties of isolated Mo atoms in bilayer epitaxial graphene (BLEG) on 4H-SiC(0001) are investigated by low temperature scanning tunneling microscopy (LT-STM). LT-STM results reveal that isolated Mo dopants prefer to substitute C atoms at alpha-sites and preferentially locate between the graphene bilayers. First-principles calculations confirm that the embedding of single Mo dopants within BLEG is energetically favorable as compared to monolayer graphene. The calculated band structures show that Mo-incorporated BLEG is n-doped, and each Mo atom introduces a local magnetic moment of 1.81 mu(B) into BLEG. Our findings demonstrate a simple and stable method to incorporate single transition metal dopants into the graphene lattice to tune its electronic and magnetic properties for possible use in graphene spin devices.
资助信息	NRF-CRP [R-143-000-360-281, R-144-000-295-281]; Central South University; NSF of China [11304398]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58797]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wan, W,Li, H,Huang, H,et al. Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)[J]. ACS NANO,2014,8(1):970.
APA	Wan, W.,Li, H.,Huang, H.,Wong, SH.,Lv, L.,...&Wee, ATS.(2014).Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001).ACS NANO,8(1),970.
MLA	Wan, W,et al."Incorporating Isolated Molybdenum (Mo) Atoms into Bilayer Epitaxial Graphene on 4H-SiC(0001)".ACS NANO 8.1(2014):970.