Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering

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	Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering
	Luo, JT ; Li, YZ ; Kang, XY ; Zeng, F ; Pan, F ; Fan, P ; Jiang, Z ; Wang, Y
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2014
卷号	586 页码:469—474
关键词	MAGNETIC-PROPERTIES ZNO FILMS CR-ALN NITRIDE RAMAN GAN TEXTURE IONS
ISSN号	0925-8388
通讯作者	luojt@hotmail.com ; zengfei@mail.tsinghua.edu.cn
英文摘要	Cu-doped AlN thin films were deposited by reactive magnetron co-sputtering at room temperature. The results showed that all the Cu-doped AlN films exhibited room-temperature ferromagnetism (RTFM). The results also showed that when the Cu-doping content was at 4 at.%, the maximum atomic magnetic moment (AMM) was about similar to 0.6 mu(B)/Cu. Raman and X-ray absorption spectroscopy showed that large numbers of N-related defects existed in Cu-doped AlN films, which was ascribed to its intrinsic RTFM. Moreover, to verify the role of defects on the RTFM of Cu-doped AlN films, defects were artificially introduced into Al0.96Cu0.04N films by carbon implantation. After carbon implantation, the AMM was significantly enhanced to similar to 2.5 mu(B)/Cu. After examination and discussion of the results, we believed that C-N compounds were formed as carbon implantation, which consumed part of the available nitrogen and then increased the density of N-related defects in Al0.96Cu0.04N films. This is favorable for coupling among bound magnetic polarons (BMP). Therefore RTFM is strongly correlated to engineered defects in Cu-doped AlN films. These results promote a viable route to enhance the RTFM of III-nitrides dilute magnetic semiconductors via defect engineering. Crown Copyright (C) 2013 Published by Elsevier B. V. All rights reserved.
收录类别	SCI
语种	英语
WOS记录号	WOS:000329856800074
公开日期	2015-03-13
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/14119]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Luo, JT,Li, YZ,Kang, XY,et al. Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2014,586:469—474.
APA	Luo, JT.,Li, YZ.,Kang, XY.,Zeng, F.,Pan, F.,...&Wang, Y.(2014).Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering.JOURNAL OF ALLOYS AND COMPOUNDS,586,469—474.
MLA	Luo, JT,et al."Enhancement of room temperature ferromagnetism in Cu-doped AlN thin film by defect engineering".JOURNAL OF ALLOYS AND COMPOUNDS 586(2014):469—474.