Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

	Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density
	Xing, JL ; Zhang, Y ; Liao, YP ; Wang, J ; Xiang, W ; Xu, YQ ; Wang, GW ; Ren, ZW ; Niu, ZC
刊名	chinese physics letters
	2014
卷号	31 期号:5 页码:054204
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26316]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Xing, JL,Zhang, Y,Liao, YP,et al. Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density[J]. chinese physics letters,2014,31(5):054204.
APA	Xing, JL.,Zhang, Y.,Liao, YP.,Wang, J.,Xiang, W.,...&Niu, ZC.(2014).Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density.chinese physics letters,31(5),054204.
MLA	Xing, JL,et al."Room-Temperature Operation of 2.4 mu m InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density".chinese physics letters 31.5(2014):054204.