Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

	Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides
	Jiang, XW ; Li, SS
刊名	applied physics letters
	2014
卷号	104 期号:19 页码:193510
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26300]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Jiang, XW,Li, SS. Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides[J]. applied physics letters,2014,104(19):193510.
APA	Jiang, XW,&Li, SS.(2014).Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides.applied physics letters,104(19),193510.
MLA	Jiang, XW,et al."Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides".applied physics letters 104.19(2014):193510.