Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells | |
Li, Z ; Kang, JJ ; Wang, BW ; Li, HJ ; Weng, YH ; Lee, YC ; Liu, ZQ ; Yi, XY ; Feng, ZC ; Wang, GH | |
刊名 | journal of applied physics
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2014 | |
卷号 | 115期号:8页码:083112 |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-19 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/25961] ![]() |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Li, Z,Kang, JJ,Wang, BW,et al. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells[J]. journal of applied physics,2014,115(8):083112. |
APA | Li, Z.,Kang, JJ.,Wang, BW.,Li, HJ.,Weng, YH.,...&Wang, GH.(2014).Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells.journal of applied physics,115(8),083112. |
MLA | Li, Z,et al."Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells".journal of applied physics 115.8(2014):083112. |
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