Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells
Li, Z ; Kang, JJ ; Wang, BW ; Li, HJ ; Weng, YH ; Lee, YC ; Liu, ZQ ; Yi, XY ; Feng, ZC ; Wang, GH
刊名journal of applied physics
2014
卷号115期号:8页码:083112
学科主题半导体器件
收录类别SCI
语种英语
公开日期2015-03-19
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/25961]  
专题半导体研究所_中科院半导体照明研发中心
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GB/T 7714
Li, Z,Kang, JJ,Wang, BW,et al. Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells[J]. journal of applied physics,2014,115(8):083112.
APA Li, Z.,Kang, JJ.,Wang, BW.,Li, HJ.,Weng, YH.,...&Wang, GH.(2014).Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells.journal of applied physics,115(8),083112.
MLA Li, Z,et al."Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells".journal of applied physics 115.8(2014):083112.
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