Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography
Zhang, YH ; Wei, TB ; Xiong, Z ; Shang, L ; Tian, YD ; Zhao, Y ; Zhou, PY ; Wang, JX ; Li, JM
刊名applied physics letters
2014
卷号105期号:1页码:013108
学科主题半导体器件
收录类别SCI
语种英语
公开日期2015-03-25
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/26256]  
专题半导体研究所_中科院半导体照明研发中心
推荐引用方式
GB/T 7714
Zhang, YH,Wei, TB,Xiong, Z,et al. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography[J]. applied physics letters,2014,105(1):013108.
APA Zhang, YH.,Wei, TB.,Xiong, Z.,Shang, L.,Tian, YD.,...&Li, JM.(2014).Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography.applied physics letters,105(1),013108.
MLA Zhang, YH,et al."Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography".applied physics letters 105.1(2014):013108.
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