Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes

	Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes
	Zhou, PY ; Dou, XM ; Wu, XF ; Ding, K ; Li, MF ; Ni, HQ ; Niu, ZC ; Jiang, DS ; Sun, BQ
刊名	scientific reports
	2014
卷号	4 页码:3633
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26168]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Zhou, PY,Dou, XM,Wu, XF,et al. Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes[J]. scientific reports,2014,4:3633.
APA	Zhou, PY.,Dou, XM.,Wu, XF.,Ding, K.,Li, MF.,...&Sun, BQ.(2014).Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes.scientific reports,4,3633.
MLA	Zhou, PY,et al."Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes".scientific reports 4(2014):3633.