Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects | |
Jiang, XW ; Gong, J ; Xu, N ; Li, SS ; Zhang, JF ; Hao, Y ; Wang, LW | |
刊名 | applied physics letters |
2014 | |
卷号 | 104期号:2页码:023512 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26163] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Jiang, XW,Gong, J,Xu, N,et al. Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects[J]. applied physics letters,2014,104(2):023512. |
APA | Jiang, XW.,Gong, J.,Xu, N.,Li, SS.,Zhang, JF.,...&Wang, LW.(2014).Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects.applied physics letters,104(2),023512. |
MLA | Jiang, XW,et al."Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects".applied physics letters 104.2(2014):023512. |
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