In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots

	In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots
	Wu, XF ; Wei, H ; Dou, XM ; He, LX ; Sun, BQ ; Ding, K ; Yu, Y ; Ni, HQ ; Niu, ZC ; Ji, Y ; Li, SS ; Jiang, DS ; Guo, GC
刊名	epl
	2014
卷号	107 期号:2 页码:27008
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26257]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wu, XF,Wei, H,Dou, XM,et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots[J]. epl,2014,107(2):27008.
APA	Wu, XF.,Wei, H.,Dou, XM.,He, LX.,Sun, BQ.,...&Guo, GC.(2014).In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots.epl,107(2),27008.
MLA	Wu, XF,et al."In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots".epl 107.2(2014):27008.