Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells

	Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells
	Wang Wei-Ying ; Liu Gui-Peng ; Jin Peng ; Mao De-Feng ; Li Wei ; Wang Zhan-Guo ; Tian Wu ; Chen Chang-Qing
刊名	chinese physics b
	2014
卷号	23 期号:11 页码:117803
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26095]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang Wei-Ying,Liu Gui-Peng,Jin Peng,et al. Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells[J]. chinese physics b,2014,23(11):117803.
APA	Wang Wei-Ying.,Liu Gui-Peng.,Jin Peng.,Mao De-Feng.,Li Wei.,...&Chen Chang-Qing.(2014).Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells.chinese physics b,23(11),117803.
MLA	Wang Wei-Ying,et al."Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells".chinese physics b 23.11(2014):117803.