Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field | |
Li, Yan ; Yang, Shengxue ; Li, Jingbo | |
刊名 | journal of physical chemistry c |
2014 | |
卷号 | 118期号:41页码:23970-23976 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-19 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26032] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Li, Yan,Yang, Shengxue,Li, Jingbo. Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field[J]. journal of physical chemistry c,2014,118(41):23970-23976. |
APA | Li, Yan,Yang, Shengxue,&Li, Jingbo.(2014).Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field.journal of physical chemistry c,118(41),23970-23976. |
MLA | Li, Yan,et al."Modulation of the Electronic Properties of Ultrathin Black Phosphorus by Strain and Electrical Field".journal of physical chemistry c 118.41(2014):23970-23976. |
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